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Apple Reportedly Eyes Samsung, Intel U.S. Foundry for Core Chips Amid TSMC Constraints, Supply Diversification

　　Apple is reportedly weighing the possibility of having some of its core device chips manufactured by Samsung and Intel. According to Bloomberg, citing sources, the company has held preliminary discussions on using the two as alternative production partners for its main processors—potentially providing a second sourcing option alongside its longstanding supplier, TSMC.　　Sources say the company has held early-stage discussions with Intel about leveraging its foundry services, while Apple executives have also visited a Samsung facility under construction in Texas that is expected to produce advanced chips.　　That said, the report notes that neither effort has led to any orders so far. Engagements with both suppliers remain at a preliminary stage, as Apple continues to have reservations about adopting non-TSMC manufacturing technologies.　　One of the key drivers behind Apple’s potential shift is supply constraints at TSMC, according to Bloomberg. As the report notes, Apple executives addressed the issue during the company’s quarterly earnings call last week, indicating that limited chip availability for iPhone and Mac devices is currently weighing on growth.　　In early 2026, Tim Cook identified access to advanced-node manufacturing as the main bottleneck for Apple’s iPhone output, according to CNBC. He noted that production is constrained by limited capacity for the company’s A-series and M-series system-on-chip (SoC) chips, which are fabricated on TSMC’s 3nm process.　　In addition, it also aims to maintain at least two suppliers for key components, allowing Apple to strengthen its negotiating leverage on pricing while reducing the risk of supply disruptions, Bloomberg adds.　　Apple’s Reported Supplier Talks May Open Door for Intel Comeback, Samsung Gains　　Apple’s talks with both companies reportedly began before the most recent supply constraints emerged. As Bloomberg notes, collaborating with Intel could offer an added advantage, potentially strengthening Apple’s ties with the Donald Trump administration. As for Samsung, the report indicates that it has already been working on supplying more peripheral components for Apple’s devices, including power management parts.　　In an August 2025 press release, Apple also announced a partnership with Samsung to co-develop a new chip manufacturing technology at Samsung’s Austin fab. Citing industry sources, Business Korea adds that the chip Samsung is expected to produce will likely be used as an image sensor in future iPhones and other Apple products.　　Separately, industry momentum appears to be building around Intel’s foundry push. According to Commercial Times, major tech firms including Google and Apple are weighing a shift to Intel’s foundry. The report adds that Apple’s M-series chips are evaluating Intel’s 18A-P node.　　Apple’s potential shift could provide a boost to both Samsung and Intel. As the report notes, securing external customers for its foundry business is central to Intel’s turnaround strategy under CEO Lip-Bu Tan. Winning Apple as a client would mark a major milestone for Tan and could help draw in additional business. Samsung, meanwhile, would also stand to gain significantly from an endorsement by Apple.

Key word：

Apple

Release time：2026-05-06 14:44 reading：138 Continue reading>>

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NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:

Key word：

NOVOSENSE

Release time：2026-04-24 10:58 reading：311 Continue reading>>

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Murata begins mass production of seven automotive MLCCs with world-leading capacitance for their rated voltage and size

　　Murata Manufacturing Co., Ltd has begun mass production of seven AEC-Q200-qualified multilayer ceramic capacitors (MLCCs) that achieve the world’s largest capacitance for a given rated voltage and size*, supporting stable operation of in-vehicle systems and greater design flexibility. Five parts in the GCM series are rated at 2.5-4 Vdc, targeting IC peripheral circuits in advanced driver assistance systems (ADAS) and autonomous driving (AD) applications. The remaining two MLCCs are rated at 25 Vdc for in-vehicle power line applications.　　In recent years, as ADAS and AD technologies advance, the number and performance level of systems installed in vehicles have continued to increase. As a result, demand for higher capacitance low-voltage MLCCs used around ICs has grown to ensure stable operation. In addition, as the number of MLCCs mounted on PCBs increases, space constraints become the critical, limiting factor in design. At the same time, for medium-rated voltage MLCCs used in automotive power lines, there is a rising demand for both miniaturization and higher capacitance to improve power and mounting density. These needs are particularly pronounced in ADAS and AD systems, where IC peripheral circuits and power lines are both subject to significant voltage fluctuations, requiring further increases in capacitance and reductions in component size.　　Leveraging its proprietary ceramic materials along with particle refinement and uniformity technologies, Murata introduces seven automotive MLCCs that achieve the world’s largest capacitance by rated voltage and size.　　For low-rated voltage MLCCs, Murata has expanded its lineup of products with a capacitance of 100 µF or higher, achieving 100 µF in the 1206-inch (3.2 mm × 1.6 mm) size, which was previously available only in the larger 1210-inch (3.2 mm × 2.5 mm) size. This reduces PCB mounting area by approximately 36%. In addition, in the smallest automotive MLCC size of 0201-inch (0.6 mm × 0.3 mm), capacitance has been increased from the typical 1-2.2 µF. For medium-rated voltage MLCCs, Murata has achieved a capacitance of 1 µF in the 0402-inch (1.0 mm × 0.5 mm) size, which was previously realized in the larger 0603-inch (1.6 mm × 0.8 mm), reducing PCB mounting area by approximately 61%.　　By combining this product lineup, Murata addresses a wide range of challenges in the automotive market, including higher capacitance requirements around ICs, severe PCB space constraints, and stabilization of power lines, thereby contributing to stable operation of entire systems and greater design flexibility. Furthermore, reducing the number of MLCCs required enables lower PCB material usage and reduced power consumption during manufacturing, helping to lessen the environmental impact.　　In the low-voltage lineup, the 2.5 Vdc rated GCM035D70E225ME02 is available in the 0201-inch size (0.6 mm × 0.3 mm), and offers a capacitance of 2.2 µF, achieving the world’s largest capacitance for its rated voltage and size class. The 1206-inch size (3.2 mm × 1.6 mm) GCM31CD70E107ME36 is rated at 2.5 Vdc and provides 100 µF, the world’s highest capacitance in its class. The GCM035D70G225MEC2 is rated at 4 Vdc, available in the 0201-inch size (0.6 mm × 0.3 mm), and delivers 2.2 µF, also the world’s highest capacitance for this category. The GCM31CD70G107ME36 is rated at 4 Vdc, available in the 1206-inch size (3.2 mm × 1.6 mm), and offers 100 µF, achieving the world’s highest capacitance for this rated voltage and size. The GCM32ED70G227MEC4 is rated at 4 Vdc, available in the 1210-inch size (3.2 mm × 2.5 mm), and provides 220 µF, the world’s largest capacitance in this class.　　The medium-rated voltage lineup has two part numbers designed for power line applications. The GCM155D71E105KE36 is rated at 25 Vdc, available in the 0402-inch size (1.0 mm × 0.5 mm), and offers 1 µF, achieving the world’s highest capacitance for this rated voltage and size. Also rated at 25 Vdc, the GCM31CC71E226ME36 is available in the 1206-inch size (3.2 mm × 1.6 mm), and provides 22 µF, also the world’s highest capacitance in its class.　　Murata has long focused on the development of automotive MLCCs and has delivered a wide range of products that demonstrate excellent performance across applications from IC peripheral circuits to powertrain and safety systems. Going forward, Murata will continue to contribute to higher performance and increased functionality of cars through ongoing product development that responds to evolving market needs.

Key word：

Murata

Release time：2026-04-24 10:39 reading：286 Continue reading>>

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ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures

　　ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs optimized for high efficiency power applications. This technology is ideally suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers.　　In recent years, the rapid proliferation of generative AI and big data processing has accelerated the deployment of high-performance servers in the industrial equipment sector. The resulting surge in power density is placing a greater strain on power infrastructure, raising concerns about localized supply shortages. While smart grids that combine renewable energy sources (i.e., solar power) with existing power supply networks are emerging as a possible solution, minimizing losses during energy conversion and storage remains a key challenge.　　In the automotive sector, next-generation electric vehicles require extended cruising range and faster charging, creating demand for lower-loss inverters and higher performance onboard chargers (OBCs). Against this backdrop, the adoption of SiC devices capable of both low loss and high efficiency is increasing in high-power applications ranging from a few kilowatts to hundreds of kilowatts.　　As the first semiconductor company globally, ROHM was the first in the world to begin mass production of SiC MOSFETs in 2010, contributing to reducing energy losses by implementing SiC devices over a wide range of high-power applications, including offering an early lineup of products compliant with automotive reliability standards such as AEC-Q101. Furthermore, the 4th generation SiC MOSFETs, for which sample provision began in June 2020, have been adopted globally in automotive and industrial applications. They are available across a broad product portfolio, including both discrete devices and modules, supporting the rapid market adoption of SiC technology.　　The newly developed 5th Generation SiC MOSFETs achieve industry-leading low loss, driving the broader adoption of SiC technology. Through structural enhancements and manufacturing process optimization, ON resistance is reduced by approximately 30% during high temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions). This improvement contributes to making units smaller while increasing output power in high temperature applications such as traction inverters for xEVs.　　ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026. Furthermore, starting from July 2026, ROHM will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.　　Going forward, ROHM plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options. ROHM will also continue to enhance its design tools and strengthen application support. By further promoting the implementation of SiC technology – now entering the mainstream phase – ROHM contributes to more efficient power utilization across a wide variety of high-power applications.　　Application ExamplesAutomotive Systems: xEV traction inverters, onboard chargers (OBCs), DC-DC converters, electric compressors　　Industrial Equipment: Power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops the core technologies needed to advance SiC devices completely in-house, from wafer fabrication and process development to packaging and quality control. At the same time, we have established a fully integrated production system that spans the entire manufacturing flow, solidifying our position as a leading SiC supplier.

Key word：

ROHM

Release time：2026-04-24 10:34 reading：285 Continue reading>>

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Renesas’ Radiation Hardened ICs Take Flight on NASA’s Artemis II Crewed Lunar Mission

　　TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced its radiation‑hardened (rad-hard) ICs are being used in NASA’s Artemis II mission, which successfully launched from the Kennedy Space Center in Florida on April 1. The first crewed mission around the moon in decades, Artemis II represents a major milestone in NASA’s plans to return humans to the moon and establish a long-term presence on the lunar surface.　　Four astronauts are now en route to orbit the moon aboard NASA’s Orion spacecraft as part of NASA’s Artemis II mission, taking humans farther from Earth than they have traveled in over fifty years. During the flight, the crew will test spacecraft systems and crew performance in this deep‑space environment before returning safely home. The mission will validate key spacecraft capabilities and position Orion for future crewed journeys and lunar landings.　　Within the Artemis II core systems, including the Orion capsule and Space Launch System (SLS) rocket, Renesas rad-hard ICs are used across multiple subsystems. These Intersil-branded devices are embedded in the space vehicle’s avionics and safety launch system, helping to regulate and distribute power, maintain signal integrity and support onboard computing. These specialized ICs are built to operate reliably when exposed to the elevated levels of radiation and extreme temperatures that are typical of human space missions.　　“Human space flight missions leave no margin for failure, and we’re proud to be one of the select few semiconductor companies entrusted to provide space-qualified technology for this historic crewed Artemis mission,” said Chris Stephens, Vice President of the HiRel Business Division at Renesas. “Our rad-hard devices help keep spacecraft systems connected, protected and precisely controlled, as crews venture into deep space. We look forward to supporting future landmark missions and ushering in the next era of solar system exploration with our space‑grade semiconductor solutions.”　　The Renesas Intersil brand has a long history in the space industry spanning more than six decades, beginning with the founding of Radiation Inc. in 1950. Since then, virtually every satellite, shuttle launch and deep-space exploration mission has included Intersil-branded products. Renesas leverages this experience to deliver efficient, thermally-optimized and highly-reliable SMD, MIL-STD-883 and MIL-PRF 38535 Class-V/Q Intersil-branded products for the defense, high-reliability (Hi-Rel), and rad-hard space markets. Renesas Intersil-brand rad-hard ICs support subsystems for mission critical applications in data communications transfer, power supplies and power conditioning, general protection circuitry, and telemetry, tracking and control (TT&C).　　For more information on Renesas’ Intersil-brand space and hi-reliability solutions, visit: www.renesas.com/space.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.　　The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.

Key word：

Renesas

Release time：2026-04-08 17:16 reading：479 Continue reading>>

Trade news

Murata launches vibration sensor device for predictive maintenance capable of detecting high-frequency range up to 20 kHz

　　Murata Manufacturing Co., Ltd. announces the SMD-type vibration sensor device PKGM-210D-R. Mass production has already begun.　　In the factory automation (FA) industry, maintenance has traditionally consisted of scheduled maintenance at fixed intervals and corrective maintenance after failures.　　In recent years, however, predictive maintenance, which detects early signs of failure to prevent unexpected equipment stoppages, has become increasingly important. In rotary machinery such as bearings and motors, component damage or insufficient lubrication generates minute abnormal vibrations in the high-frequency range up to 20 kHz before failures become serious. Measuring such high-frequency vibrations is challenging due to interference from noise, and detection has often relied on the experience of skilled technicians using auditory inspection.　　By combining its long-established piezoelectric ceramic vibration detection technology with advanced circuit packaging expertise, Murata has developed the PKGM-210D-R, capable of detecting vibrations up to 20 kHz, the upper limit of the audible range. This enables detection of subtle high-frequency abnormal vibrations that were previously identified only by human hearing.　　The product supports early prediction of equipment issues, helping to reduce downtime, optimize maintenance timing, extend component life, and minimize excess inventory. In addition, its compact size of 0.20 × 0.20 × 0.14 inches (5.0 × 5.0 × 3.5 mm) allows easy retrofitting to existing equipment or direct integration into motor components.　　Key features:　　Z-axis direction detection up to 20 kHz　　Compact size (0.20 × 0.20 × 0.14 inch / 5.0 × 5.0 × 3.5 mm) for easy retrofit and built-in mounting　　Built-in driver and filter circuits　　Versatile single analog output　　Built-in temperature sensor

Key word：

Murata

Release time：2026-03-19 17:06 reading：532 Continue reading>>

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MWC 2026 | Fibocom Unveils AI ECR Solution, Ushering in a New Era of Smart Retail

　　At MWC 2026, Fibocom introduced its next-generation AI Electronic Cash Register (ECR) solution for automated and smart retail scenarios.　　Powered by MediaTek’s high-performance Genio 520/720 IoT platform, the solution offers exceptional scalability and supports on-device large model integration, enabling global retailers to deliver smarter, faster, and more immersive retail experiences.　　Core Hardware Power: High-Performance Edge AI Computing　　Built on an advanced 6nm octa-core processor, the AI ECR provides strong edge AI computing for both traditional and intelligent retail operations.　　Equipped with 2× Cortex-A78 (@2.2GHz) and 6× Cortex-A55 (@2.0GHz) cores plus an NPU 850 delivering up to 10 TOPS, it supports local large language models for voice interaction, inventory forecasting, and visual recognition — minimizing cloud reliance while ensuring faster response and data privacy.　　Immersive Visual & Seamless Connectivity　　The platform supports a 15.6-inch 2K display with 2D/3D acceleration and can drive 4K/5K ultra-HD screens, ideal for digital signage.　　To meet diverse retail needs, it integrates dual-camera input (MIPI CSI + USB) for facial payment and behavior analysis, plus multiple I/O ports (USB-A/C, HDMI, RJ45, RJ12, audio) for peripherals.　　Built-in Wi-Fi 6 (1×1) and Bluetooth 5.3 ensure high-speed, stable wireless connections.　　Powered by Android 15: Secure and Future-Ready　　Among the first to run Android 15, the solution provides an open, secure ecosystem with enhanced multitasking, memory management, and system-level protection—ensuring smooth, long-term performance for industrial and consumer-grade applications.　　“We look forward to continuing our collaboration with Fibocom, leveraging the MediaTek Genio platform to deliver powerful edge AI performance with on-device large model support,” said CK Wang, Vice President and General Manager of MediaTek IoT. “This solution demonstrates our shared commitment to advancing smart retail and helping businesses become more competitive and efficient.”　　Ralph Zhao, General Manager of Mobile Computing Solutions BU at Fibocom, stated:　　“As the retail industry accelerates toward automation and intelligence, edge AI computing has become the key to improving user experience. Fibocom’s new AI ECR solution represents a breakthrough in hardware design and enables large-model applications at the point of sale with 10 TOPS of processing power — empowering partners to build more competitive and intelligent retail solutions.”

Key word：

Fibocom

Release time：2026-03-10 16:24 reading：647 Continue reading>>

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MWC 2026 | Fibocom and du’s ALL-IN-ONE AI CPE Solution Reinvents Family Data Interaction with AI NAS

　　On March 5 at the 2026 Mobile World Congress (MWC), Fibocom and du showcased the upgraded ALL-IN-ONE AI CPE solution featuring an enhanced AI NAS, further integrating 5G, AI and real-life scenarios. The upgrade transforms home storage from passive data retention into active intelligent management, delivering more personalized smart home experiences.　　Fibocom first introduced the ALL-IN-ONE AI CPE at NetworkX in France in October 2025, redefining the traditional 5G CPE form factor. The device integrates intelligent voice interaction, human and environmental sensing, and leverages Fibocom’s proprietary FWA AI SkyEngine to enable multi-scenario applications including smart home network management, home security, and smart home control.　　du positions AI-powered 5G CPE as a key enabler of premium fixed wireless access (FWA) services across residential, SME and enterprise markets in the UAE. By emphasizing intelligent self-optimization, ultra-low latency, high reliability and simplified deployment, du aims to deliver consistent gigabit connectivity while supporting cloud services, gaming and smart digital experiences.　　The latest upgrade significantly enhances home data management. Powered by SkyEngine computing capabilities, the built-in AI NAS allows users to quickly locate photos by entering keywords, eliminating the need to manually search large file libraries. The system can also detect duplicate photos and notify users to free up storage space efficiently.　　Natural voice interaction further simplifies the experience. Users can search content through voice commands, such as requesting “family photos from last summer at the beach,” while the AI NAS automatically categorizes photos by location, time, people and themes to generate personalized digital albums.　　All photo recognition and retrieval are processed locally through edge AI to ensure privacy and data security, supported by a physical privacy switch. The CPE also supports HDMI output, allowing users to display photos on larger screens via voice commands, enhancing shared family experiences.　　By integrating AI NAS, intelligent interaction and network optimization, the ALL-IN-ONE AI CPE continues evolving from traditional communication hardware into a full-scenario intelligent home hub, helping operators accelerate the shift toward platform-based services in the 5G FWA ecosystem.

Key word：

Fibocom

Release time：2026-03-10 16:21 reading：682 Continue reading>>

Trade news

Renesas Develops SoC Technologies for Automotive Multi-Domain ECUs Essential for the SDV Era

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, has developed three System-on-Chip (SoC) technologies for automotive multi-domain electronic control units (ECUs). They feature advanced AI processing capabilities and chiplet functions, serving as the core technology platform for next-generation automotive electrical/electronic (E/E) architectures. Renesas presented the results at the International Solid-State Circuits Conference 2026 (ISSCC 2026), held February 15–19 in San Francisco, USA.　　In the age of software-defined vehicles (SDVs), automotive SoCs require advanced performance to run multiple applications simultaneously and must offer scalability through chiplets. They must also meet the functional safety requirements of automotive SoCs. As multi-domain SoCs powering central computing are growing larger and more complex, maintaining automotive-grade quality is becoming more difficult. With increased performance in advanced SoCs, power consumption also rises, making improvements in power efficiency and safety vital. To meet these needs, Renesas has developed the following new technologies.　　1. Chiplet architecture that supports functional safety　　To meet the functional safety requirements of automotive SoCs, Renesas has developed a new, proprietary architecture that supports ASIL D even in a chiplet configuration. By combining the standard die-to-die UCIe interface with a proprietary RegionID mechanism, the architecture prevents interference with hardware resources, even when numerous applications run simultaneously, thereby achieving Freedom from Interference (FFI).　　Conventional UCIe interfaces lack functionality to transmit RegionIDs between dies. Renesas developed a method for mapping RegionIDs into physical address space, encoding them into the UCIe region, and transmitting them. This enables safe access control through the memory management unit (MMU) and real-time cores, and meets functional safety requirements across chiplets. Additionally, by maintaining bandwidth from processors to the memory bus, the UCIe interface was confirmed through testing to achieve a high transmission speed of 51.2 GB/s, approaching the upper limit of intra-SoC transfer speeds. This technology provides both scalability and safety for high-performance automotive SoCs.　　2. Advanced AI processing capabilities and automotive-grade quality　　Automotive-grade quality is vital for SDV systems. Renesas has created a 3 nm SoC design that improves the performance of neural processing units (NPUs) for AI processing, while maintaining automotive-grade quality. In recent years, NPUs have been growing larger, with their area expanding 1.5-fold compared to previous generations. This has led to increased clock latency between shared clock sources and individual circuits. To address this problem, Renesas has redesigned the clock architecture by splitting up clock pulse generators (CPGs), which in past designs were module-level units, and placing mini-CPGs (mCPGs) at the sub-module level. This greatly reduces clock latency and meets timing requirements.　　However, multi-layer mCPGs complicate test clock synchronization, which is critical for achieving zero defects in automotive applications. Renesas has integrated test circuits into the hierarchical CPG architecture and unified the signal path for user clocks and test clocks. The new design also synchronizes upper- and lower-level mCPGs under a single clock source in test mode. This makes unified phase adjustment possible. As a result, Renesas has been able to achieve quality aligned with zero-defect expectations, even for large-scale SoCs, providing the high reliability required for next-generation SDV automotive SoCs.　　3. Advanced power control and monitoring for improved power efficiency and safety　　To achieve the high level of performance required for automotive SoCs with improved power efficiency and safety, Renesas has developed advanced power gating technology that uses over 90 power domains. It enables precise power control, from several milliwatts to several tens of watts, depending on operating conditions. Furthermore, Renesas has split power switches (PSWs) into ring PSWs and row PSWs to reduce IR drops (voltage drops) associated with increasing current density from smaller process geometries. When power is turned on, the ring PSW suppresses rush currents. Then the row PSW equalizes impedance within the domain. Together, these reduce IR drops by roughly 13% compared with conventional designs.　　To meet ASIL D functional safety standards, the dual core lock step (DCLS) configuration controls the master and checker cores with independent power switches and controllers. With this design, even if one side fails, the failure can be detected through lockstep operation. Furthermore, loopback monitoring is performed for each PSW's gate signal, so OFF states are detected when a failure occurs. A digital voltage meter (DVMON), which is highly resistant to temperature drift, is used for voltage monitoring. This improves aging tolerance by 1.4 mV. These technologies enable high-performance automotive SoCs that offer both power efficiency and safety.　　These new technologies are being used in Renesas' R-Car X5H SoC for automotive multi-domain ECUs. With R-Car X5H, users can accelerate the evolution of SDVs while ensuring safety and enabling autonomous driving, digital cockpit and more.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.

Key word：

Renesas

Release time：2026-02-28 15:45 reading：758 Continue reading>>

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TDK extends X2 portfolio with compact 350 V (AC) capacitors for industrial and automotive

　　TDK Corporation (TSE:6762) extends its X2 safety film capacitor portfolio with the new B3292xU/V series,now supporting higher voltages and offering compact lead spacings of 15 mm and 22.5 mm, with capacitance values from 47 nF to 1.8 µF. Rated at 350 V (AC) and robust against peak voltage pulses up to 2.5 kV(IEC 60384-14), the series is designed for interference suppression in demanding, space-constrained industrial and automotive environments in series with the mains. Typical applications are on-board chargers, EV charging systems, PV inverters, energy meters, and capacitive power supplies.　　The entire series is now available with lead spacings from 15 mm to 52.5 mm, covering capacitance values from 47 nF to 20 µF. It passed the THB (temperature, humidity, bias) test at +85 °C, 85% RH, and rated voltage for 1000 h, meeting Grade III, Test Condition B requirements. In addition, the series offers AEC-Q200 compliance, excellent self-healing properties, and a maximum operating temperature of +110 °C, ensuring durability even under severe ambient conditions.　　With their compact dimensions and high DC testing voltage (1505 V for 2 s), the B3292xU/V series provides a balanced solution of performance and size for next-generation industrial drives and automotive power electronics, supporting the growing need for efficient and space-optimized EMI suppression solutions.　　For the B3292xU/V series, TDK offers a range of design tools and SPICE models.　　Main applications　　Capacitive power supplies, energy meters　　Industrial drives　　On-board chargers　　EV charging　　PV inverter　　Main features and benefits　　X2 class for interference (EMI) suppression　　“Across the line” applications　　For connections in series with the mains　　Severe ambient conditions　　Small dimensions　　Good self-healing properties　　AEC-Q200E compliant

Key word：

TDK

Release time：2026-02-27 16:14 reading：571 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
MC33074DR2G	onsemi
CDZVT2R20B	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor

model	brand	To snap up
TPS63050YFFR	Texas Instruments
BU33JA2MNVX-CTL	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
STM32F429IGT6	STMicroelectronics
BP3621	ROHM Semiconductor
ESR03EZPJ151	ROHM Semiconductor

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